? 2001 ixys all rights reserved features ? international standard packages ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 900 v bv dss temperature dependence 3.68 v/k v gh(th) v ds = v gs , i d = 8 ma 2.5 5.0 v v gh(th) temperature dependence -0.009 v/k i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.22 ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 900 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c39a i dm t c = 25 c, pulse width limited by t jm 154 a i ar t c = 25 c39a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g hiperfet tm power mosfets single mosfet die n-channel enhancement mode avalanche rated, high dv/dt, low t rr 98628b (9/01) d s g s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source v dss = 900 v i d25 = 39a r ds(on) = 0.22 ? ? ? ? ? t rr 250 ns ixfn 39n90
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfn 39n90 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 0.5 ? i d25 , pulse test 30 45 s c iss 9200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1360 pf c rss 380 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 68 ns t d(off) r g = 1 ? (external), 125 n s t f 30 ns q g(on) 390 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 nc q gd 190 nc r thjc 0.18 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 39 a i sm repetitive; 154 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 2.0 c i rm 9.0 a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
? 2001 ixys all rights reserved t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 30 35 40 i d - amperes 0 1020304050607080 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts 0 2 4 6 8 10 12 14 16 18 20 i d - amperes 0 5 10 15 20 25 30 35 40 45 v ds - volts 0 2 4 6 8 101214161820 i d - amperes 0 10 20 30 40 50 60 70 80 v gs = 10v t j = 125 o c t j = 25 o c 4v 4v 5v t j = 25 o c t j = 125 o c v gs = 9v 8v 7v 6v t j = 125 o c 5v v gs = 9v 8v 7v 6v t j = 25 o c v gs - volts 3.5 4.0 4.5 5.0 5.5 6.0 i d - amperes 0 10 20 30 40 50 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i d =19.5a i d = 39a v gs = 10v ixfn 39n90 figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 0.5 i d25 value vs.t j
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.010 0.100 1.000 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 0 2 4 6 8 10 12 14 16 18 gate charge - nc 0 50 100 150 200 250 300 350 400 v gs - volts 0 2 4 6 8 10 crss coss v ds = 450 v i d = 19.50a i g = 10 ma f = 100khz ciss single pulse v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - a mperes 0 20 40 60 80 100 t j = 125 o c t j = 25 o c v gs = 0v ixfn 39n90 figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance
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